IRF6797MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

7

Input Capacitance (Ciss) (Max) @ Vds :

5790pF @ 13V

Drain to Source Breakdown Voltage :

25V

Rise Time :

32ns

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

15 ns

Power Dissipation-Max :

2.8W Ta 89W Tc

JESD-609 Code :

e1

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

260 mJ

Transistor Element Material :

SILICON

Height :

506μm

Additional Feature :

LOW CONDUCTION LOSS

ECCN Code :

EAR99

Length :

6.35mm

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

36A Ta 210A Tc

Package / Case :

DirectFET™ Isometric MX

Number of Terminations :

3

Power Dissipation :

89W

Mounting Type :

Surface Mount

Published :

2009

JESD-30 Code :

R-XBCC-N3

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

BOTTOM

Width :

5.05mm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 38A, 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs (Max) :

±20V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

300A

Turn On Delay Time :

22 ns

Case Connection :

DRAIN

Continuous Drain Current (ID) :

36A

Transistor Application :

SWITCHING

Turn-Off Delay Time :

20 ns