IRF6795MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Terminations :

3

Operating Temperature :

-40°C~150°C TJ

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Power Dissipation-Max :

2.8W Ta 75W Tc

Peak Reflow Temperature (Cel) :

260

Terminal Position :

BOTTOM

Length :

6.35mm

Package / Case :

DirectFET™ Isometric MX

Series :

HEXFET®

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Termination :

SMD/SMT

Continuous Drain Current (ID) :

32A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XBCC-N3

Additional Feature :

LOW CONDUCTION LOSS

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 4.5V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rise Time :

27ns

Width :

5.05mm

Current - Continuous Drain (Id) @ 25°C :

32A Ta 160A Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

5

Published :

2010

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

Recovery Time :

41 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 32A, 10V

Power Dissipation :

2.8W

Height :

506μm

Resistance :

1.8MOhm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4280pF @ 13V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

16 ns

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Nominal Vgs :

1.8 V

Dual Supply Voltage :

25V

Turn-Off Delay Time :

16 ns

JESD-609 Code :

e1

Radiation Hardening :

No

REACH SVHC :

No SVHC

Fall Time (Typ) :

11 ns

Vgs(th) (Max) @ Id :

2.35V @ 100μA