IRF6794MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Rise Time :

25ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

32A Ta 200A Tc

Rds On Max :

1.7 mΩ

FET Feature :

Schottky Diode (Body)

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

RoHS Status :

RoHS Compliant

Power Dissipation :

100W

Continuous Drain Current (ID) :

32A

Turn-Off Delay Time :

9.7 ns

Vgs (Max) :

±20V

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

Drain to Source Breakdown Voltage :

25V

Package / Case :

DirectFET™ Isometric MX

Mounting Type :

Surface Mount

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Length :

6.35mm

Supplier Device Package :

DIRECTFET™ MX

Published :

2010

Width :

5.05mm

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

4420pF @ 13V

Power Dissipation-Max :

2.8W Ta 100W Tc

Mount :

Surface Mount

Number of Pins :

5

Input Capacitance :

4.42nF

Max Operating Temperature :

150°C

Min Operating Temperature :

-40°C

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

1.7mOhm @ 32A, 10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Resistance :

3mOhm

Height :

506μm

Fall Time (Typ) :

9.6 ns