IRF6785MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Transistor Application :

AMPLIFIER

Power Dissipation :

57W

Series :

HEXFET®

Power Dissipation-Max :

2.8W Ta 57W Tc

Case Connection :

DRAIN

Radiation Hardening :

No

Continuous Drain Current (ID) :

3.4A

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Mounting Type :

Surface Mount

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta 19A Tc

Width :

5.05mm

Operating Mode :

ENHANCEMENT MODE

Height :

506μm

Vgs(th) (Max) @ Id :

5V @ 100µA

Number of Elements :

1

Package / Case :

DirectFET™ Isometric MZ

Length :

6.35mm

Drain to Source Breakdown Voltage :

200V

Pulsed Drain Current-Max (IDM) :

27A

Rds On (Max) @ Id, Vgs :

100m Ω @ 4.2A, 10V

Rise Time :

8.6ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

7.2 ns

Drain-source On Resistance-Max :

0.1Ohm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

5

Fall Time (Typ) :

14 ns

Turn On Delay Time :

6.2 ns

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

JESD-30 Code :

R-XBCC-N3

Drain Current-Max (Abs) (ID) :

19A

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

33 mJ

Published :

2007