IRF6785MTR1PBF
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- Mfr.Part #
- IRF6785MTR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MZ
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3.4A DIRECTFET
- Stock
- 27,304
- In Stock ：
- 27,304
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- DirectFET™ Isometric MZ
- Threshold Voltage :
- 5V
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 7.2 ns
- Published :
- 2007
- Drain to Source Breakdown Voltage :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -40°C
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -40°C~150°C TJ
- Turn On Delay Time :
- 6.2 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Mounting Type :
- Surface Mount
- Height :
- 506μm
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Rds On Max :
- 100 mΩ
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 5 V
- Resistance :
- 100MOhm
- Rise Time :
- 8.6ns
- Max Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 2.8W Ta 57W Tc
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 4.2A, 10V
- Fall Time (Typ) :
- 14 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 1.5nF
- Number of Pins :
- 7
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 19A
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Ta 19A Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Radiation Hardening :
- No
- Width :
- 5.05mm
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Dual Supply Voltage :
- 200V
- Drain to Source Resistance :
- 85mOhm
- Element Configuration :
- Dual
- Supplier Device Package :
- DIRECTFET™ MZ
- Power Dissipation :
- 57W
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- FET Type :
- N-Channel
- Length :
- 6.35mm
- Datasheets
- IRF6785MTR1PBF
N-Channel Tape & Reel (TR) 100mOhm @ 4.2A, 10V ±20V 1500pF @ 25V 36nC @ 10V 200V DirectFET™ Isometric MZ
IRF6785MTR1PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 19A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 7.2 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 85mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.2 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF6785MTR1PBF Features
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 7.2 ns
single MOSFETs transistor is 85mOhm
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IRF6785MTR1PBF Applications
There are a lot of Infineon Technologies
IRF6785MTR1PBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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