IRF6775MTR1PBF
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- Mfr.Part #
- IRF6775MTR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MZ
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4.9A DIRECTFET
- Stock
- 4,222
- In Stock ：
- 4,222
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 5.9 ns
- Nominal Vgs :
- 5 V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 1411pF @ 25V
- Power Dissipation-Max :
- 2.8W Ta 89W Tc
- Number of Pins :
- 7
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Resistance :
- 56mOhm
- Threshold Voltage :
- 5V
- Height :
- 508μm
- Published :
- 2013
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Width :
- 5.05mm
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 15 ns
- Termination :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- 150V
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 5.8 ns
- Power Dissipation :
- 89W
- Package / Case :
- DirectFET™ Isometric MZ
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A Ta 28A Tc
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 28A
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 5.6A, 10V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -40°C~150°C TJ
- FET Type :
- N-Channel
- Rise Time :
- 7.8ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 150V
- ECCN Code :
- EAR99
- Length :
- 5.45mm
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRF6775MTR1PBF
N-Channel Tape & Reel (TR) 56m Ω @ 5.6A, 10V ±20V 1411pF @ 25V 36nC @ 10V DirectFET™ Isometric MZ
IRF6775MTR1PBF Description
This digital audio MOSFET is designed for Class D audio amplifier applications. The MOSFET uses the latest technology to achieve a low on-resistance per silicon area. In addition, gate charge, body diode reverse recovery and internal gate resistance are optimized to improve the key performance factors of Class D audio amplifier, such as efficiency, THD and EMI. IRF6775MPbF equipment adopts DirectFETTM packaging technology. Compared with traditional wire-welded SOIC packaging, DirectFETTM packaging technology provides lower parasitic inductance and resistance. Lower inductors improve EMI performance by reducing the voltage ringing associated with fast current transients. The DirectFETTM package is compatible with existing layout geometry used in power applications, printed circuit board assembly equipment and gas phase, infrared or convection welding technologies, if the application instructions for manufacturing methods and processes are followed, AN-1035. The DirectFETTM package also allows double-sided cooling to maximize heat transfer in the power system, thereby increasing thermal resistance and power consumption. The combination of these features makes the MOSFET an efficient, rugged and reliable device for Class D audio amplifier applications.
IRF6775MTR1PBF Features
? Latest MOSFET Silicon technology
? Key parameters optimized for Class-D audio amplifier
applications
? Low RDS(on) for improved efficiency
? Low Qg for better THD and improved efficiency
? Low Qrr for better THD and lower EMI
? Low package stray inductance for reduced ringing and lower EMI
? Can deliver up to 250W per channel into 4Ω Load in
Half-Bridge Configuration Amplifier
? Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant containing no lead or bromide
Lead-Free (Qualified up to 260°C Reflow)
IRF6775MTR1PBF Applications
Class D audio amplifier applications
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