IRF6729MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

31A Ta 190A Tc

Input Capacitance :

6.03nF

FET Type :

N-Channel

Operating Temperature :

-40°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Published :

2009

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

30V

Package / Case :

DirectFET™ Isometric MX

Number of Pins :

7

Turn On Delay Time :

22 ns

Series :

HEXFET®

Rds On Max :

1.8 MΩ

Rise Time :

37ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Height :

506μm

Power Dissipation-Max :

2.8W Ta 104W Tc

Continuous Drain Current (ID) :

31A

Drain to Source Resistance :

2.7MOhm

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.8mOhm @ 31A, 10V

Fall Time (Typ) :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 4.5V

Radiation Hardening :

No

Max Operating Temperature :

150°C

Width :

5.05mm

Input Capacitance (Ciss) (Max) @ Vds :

6030pF @ 15V

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

6.35mm

Power Dissipation :

2.8W

Min Operating Temperature :

-40°C

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Nominal Vgs :

1.8 V

Supplier Device Package :

DIRECTFET™ MX

Threshold Voltage :

1.8V

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Turn-Off Delay Time :

20 ns