IRF6727MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

89W

Threshold Voltage :

1.8V

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 32A, 10V

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 4.5V

Turn-Off Delay Time :

24 ns

Power Dissipation-Max :

2.8W Ta 89W Tc

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5.0546mm

Current - Continuous Drain (Id) @ 25°C :

32A Ta 180A Tc

Case Connection :

DRAIN

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Height :

508μm

Package / Case :

DirectFET™ Isometric MX

Series :

HEXFET®

Length :

6.35mm

Fall Time (Typ) :

16 ns

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Turn On Delay Time :

21 ns

Input Capacitance (Ciss) (Max) @ Vds :

6190pF @ 15V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

260A

Number of Terminations :

3

REACH SVHC :

No SVHC

Number of Pins :

5

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

Number of Elements :

1

JESD-30 Code :

R-XBCC-N3

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

31ns

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

32A