IRF6727MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Power Dissipation-Max :

2.8W Ta 89W Tc

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 4.5V

Dual Supply Voltage :

30V

Mounting Type :

Surface Mount

Power Dissipation :

2.8W

Threshold Voltage :

1.8V

Termination :

SMD/SMT

Min Operating Temperature :

-40°C

Height :

508μm

Rds On (Max) @ Id, Vgs :

1.7mOhm @ 32A, 10V

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Recovery Time :

41 ns

Nominal Vgs :

1.8 V

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

6190pF @ 15V

Continuous Drain Current (ID) :

32A

Series :

HEXFET®

Radiation Hardening :

No

Turn On Delay Time :

21 ns

Element Configuration :

Single

Package / Case :

DirectFET™ Isometric MX

Published :

2007

Width :

5.05mm

RoHS Status :

RoHS Compliant

Input Capacitance :

6.19nF

Packaging :

Tape and Reel (TR)

Operating Temperature :

-40°C~150°C TJ

Rds On Max :

1.7 mΩ

Number of Pins :

7

Current - Continuous Drain (Id) @ 25°C :

32A Ta 180A Tc

FET Type :

N-Channel

Length :

5.45mm

Fall Time (Typ) :

16 ns

Supplier Device Package :

DIRECTFET™ MX

Rise Time :

31ns

Drain to Source Resistance :

2.4MOhm

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

24 ns

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Mount :

Surface Mount