IRF6726MTR1PBF

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Mfr.Part #
IRF6726MTR1PBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric MT
Datasheet
Download
Description
MOSFET N-CH 30V 32A DIRECTFET
Stock
4,572
In Stock :
4,572

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
25 ns
Dual Supply Voltage :
30V
ECCN Code :
EAR99
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
2.35V @ 150μA
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
6140pF @ 15V
Fall Time (Typ) :
17 ns
Avalanche Energy Rating (Eas) :
260 mJ
RoHS Status :
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 4.5V
Number of Pins :
7
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Turn On Delay Time :
20 ns
Power Dissipation :
2.8W
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rise Time :
30ns
Series :
HEXFET®
JESD-30 Code :
R-XBCC-N3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
32A
Case Connection :
DRAIN
Lead Free :
Lead Free
Package / Case :
DirectFET™ Isometric MT
Power Dissipation-Max :
2.8W Ta 89W Tc
Mounting Type :
Surface Mount
Radiation Hardening :
No
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
30V
Nominal Vgs :
1.7 V
Pulsed Drain Current-Max (IDM) :
250A
Height :
508μm
Terminal Position :
BOTTOM
Termination :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
32A Ta 180A Tc
Length :
5.45mm
Published :
2007
Rds On (Max) @ Id, Vgs :
1.7m Ω @ 32A, 10V
Recovery Time :
41 ns
Width :
5.05mm
Transistor Element Material :
SILICON
Number of Terminations :
3
Operating Temperature :
-40°C~150°C TJ
Threshold Voltage :
1.7V
Operating Mode :
ENHANCEMENT MODE
Datasheets
IRF6726MTR1PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6726MTR1PBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:7, Package / Case:DirectFET™ Isometric MT, Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:-40°C~150°C TJ, IRF6726MTR1PBF pinout, IRF6726MTR1PBF datasheet PDF, IRF6726MTR1PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6726MTR1PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6726MTR1PBF


N-Channel Tape & Reel (TR) 1.7m Ω @ 32A, 10V ±20V 6140pF @ 15V 77nC @ 4.5V DirectFET™ Isometric MT

IRF6726MTR1PBF Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 260 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6140pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 32A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 250A.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.7V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

IRF6726MTR1PBF Features


the avalanche energy rating (Eas) is 260 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 250A.
a threshold voltage of 1.7V


IRF6726MTR1PBF Applications


There are a lot of Infineon Technologies
IRF6726MTR1PBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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