IRF6725MTR1PBF
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- Mfr.Part #
- IRF6725MTR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 28A DIRECTFET
- Stock
- 2,771
- In Stock ：
- 2,771
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 30V
- Recovery Time :
- 41 ns
- Published :
- 2007
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Package / Case :
- DirectFET™ Isometric MX
- Power Dissipation :
- 2.8W
- Turn-Off Delay Time :
- 19 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 15V
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Continuous Drain Current (ID) :
- 28A
- Width :
- 5.05mm
- Length :
- 6.35mm
- Operating Temperature :
- -40°C~150°C TJ
- Turn On Delay Time :
- 16 ns
- Number of Pins :
- 7
- Termination :
- SMD/SMT
- Rise Time :
- 22ns
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 28A Ta 170A Tc
- Height :
- 506μm
- Threshold Voltage :
- 1.8V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 2.8W Ta 100W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 28A, 10V
- Nominal Vgs :
- 1.8 V
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 4.5V
- Dual Supply Voltage :
- 30V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2.35V @ 100μA
- Resistance :
- 2.2MOhm
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Fall Time (Typ) :
- 13 ns
- Datasheets
- IRF6725MTR1PBF
N-Channel Tape & Reel (TR) 2.2m Ω @ 28A, 10V ±20V 4700pF @ 15V 54nC @ 4.5V DirectFET™ Isometric MX
IRF6725MTR1PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4700pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 28A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.8V, which means that it will not activate any of its functions when its threshold voltage reaches 1.8V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF6725MTR1PBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
a threshold voltage of 1.8V
IRF6725MTR1PBF Applications
There are a lot of Infineon Technologies
IRF6725MTR1PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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