IRF6722STR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

10.3mOhm

Current - Continuous Drain (Id) @ 25°C :

13A Ta 58A Tc

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Dual Supply Voltage :

30V

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Recovery Time :

32 ns

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Rise Time :

11ns

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Resistance :

7.3mOhm

Rds On (Max) @ Id, Vgs :

7.3mOhm @ 13A, 10V

Supplier Device Package :

DIRECTFET™ ST

Height :

506μm

FET Type :

N-Channel

Package / Case :

DirectFET™ Isometric ST

Power Dissipation :

2.2W

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

8.5 ns

Input Capacitance :

1.32nF

Mounting Type :

Surface Mount

Min Operating Temperature :

-40°C

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

4.826mm

Continuous Drain Current (ID) :

13A

Number of Pins :

5

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Published :

2007

Fall Time (Typ) :

5.7 ns

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

Rds On Max :

7.3 mΩ

Termination :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 15V

Power Dissipation-Max :

2.2W Ta 42W Tc

Turn On Delay Time :

7.7 ns

Nominal Vgs :

1.9 V

Width :

3.95mm

Vgs (Max) :

±20V