IRF6722MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Min Operating Temperature :

-40°C

Drain to Source Resistance :

10.8mOhm

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1.8V

Length :

6.35mm

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

7.7mOhm @ 13A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-40°C~150°C TJ

Published :

2007

Packaging :

Tape and Reel (TR)

Rise Time :

7.8ns

FET Type :

N-Channel

Height :

508μm

Number of Elements :

1

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Rds On Max :

7.7 mΩ

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Fall Time (Typ) :

6.1 ns

Supplier Device Package :

DIRECTFET™ MP

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Recovery Time :

29 ns

Width :

5.05mm

Current - Continuous Drain (Id) @ 25°C :

13A Ta 56A Tc

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Series :

HEXFET®

Continuous Drain Current (ID) :

13A

Mount :

Surface Mount

Power Dissipation-Max :

2.3W Ta 42W Tc

Max Operating Temperature :

150°C

Input Capacitance :

1.3nF

Turn On Delay Time :

11 ns

Number of Pins :

5

Power Dissipation :

42W

Package / Case :

DirectFET™ Isometric MP

Turn-Off Delay Time :

9.5 ns

Radiation Hardening :

No