IRF6721STRPBF
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- Mfr.Part #
- IRF6721STRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric SQ
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A DIRECTFET
- Stock
- 20,743
- In Stock ：
- 20,743
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Radiation Hardening :
- No
- Series :
- HEXFET®
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 4
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 9.3 ns
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Published :
- 2007
- Mounting Type :
- Surface Mount
- Rise Time :
- 8.9ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 60A Tc
- Fall Time (Typ) :
- 5.3 ns
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 62 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Power Dissipation :
- 42W
- Length :
- 4.826mm
- Number of Elements :
- 1
- JESD-30 Code :
- R-XBCC-N2
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.95mm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 14A
- Terminal Position :
- BOTTOM
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1430pF @ 15V
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Height :
- 506μm
- Package / Case :
- DirectFET™ Isometric SQ
- Vgs(th) (Max) @ Id :
- 2.4V @ 25μA
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Drain to Source Breakdown Voltage :
- 30V
- Rds On (Max) @ Id, Vgs :
- 7.3m Ω @ 14A, 10V
- Operating Temperature :
- -40°C~150°C TJ
- Turn On Delay Time :
- 7.8 ns
- Power Dissipation-Max :
- 2.2W Ta 42W Tc
- Drain-source On Resistance-Max :
- 0.0073Ohm
- Datasheets
- IRF6721STRPBF
N-Channel Tape & Reel (TR) 7.3m Ω @ 14A, 10V ±20V 1430pF @ 15V 17nC @ 4.5V DirectFET™ Isometric SQ
IRF6721STRPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 62 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1430pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 14A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 9.3 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF6721STRPBF Features
the avalanche energy rating (Eas) is 62 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9.3 ns
IRF6721STRPBF Applications
There are a lot of Infineon Technologies
IRF6721STRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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