IRF6721STR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.95mm

Supplier Device Package :

DIRECTFET™ SQ

Continuous Drain Current (ID) :

14A

Drain to Source Resistance :

10.9mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 15V

Rds On Max :

7.3 mΩ

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

Published :

2007

FET Type :

N-Channel

Length :

4.826mm

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

7.3mOhm @ 14A, 10V

Nominal Vgs :

1.9 V

Current - Continuous Drain (Id) @ 25°C :

14A Ta 60A Tc

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

508μm

Series :

HEXFET®

RoHS Status :

RoHS Compliant

Power Dissipation :

2.2W

Fall Time (Typ) :

5.3 ns

Threshold Voltage :

1.9V

Package / Case :

DirectFET™ Isometric SQ

Input Capacitance :

1.43nF

Recovery Time :

26 ns

Packaging :

Tape and Reel (TR)

Rise Time :

8.9ns

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Turn On Delay Time :

7.8 ns

Min Operating Temperature :

-40°C

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Power Dissipation-Max :

2.2W Ta 42W Tc

Vgs (Max) :

±20V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Turn-Off Delay Time :

9.3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Number of Pins :

6