IRF6720S2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Supplier Device Package :

DIRECTFET S1

Input Capacitance :

1.14nF

Drain to Source Resistance :

12.8mOhm

Number of Pins :

4

Fall Time (Typ) :

11 ns

Rds On (Max) @ Id, Vgs :

8mOhm @ 11A, 10V

Drain to Source Voltage (Vdss) :

30V

Published :

2009

Series :

HEXFET®

Continuous Drain Current (ID) :

11A

Max Operating Temperature :

175°C

Height :

558.8μm

Rise Time :

35ns

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Rds On Max :

8 mΩ

Current - Continuous Drain (Id) @ 25°C :

11A Ta 35A Tc

Packaging :

Tape and Reel (TR)

Width :

3.95mm

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Turn-Off Delay Time :

11 ns

RoHS Status :

RoHS Compliant

Turn On Delay Time :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

1140pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

17W

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Power Dissipation-Max :

1.7W Ta 17W Tc

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Package / Case :

DirectFET™ Isometric S1

Operating Temperature :

-55°C~175°C TJ

Length :

4.826mm