IRF6720S2TR1PBF
- Mfr.Part #
- IRF6720S2TR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric S1
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A DIRECTFET
- Stock
- 26,163
- In Stock :
- 26,163
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Recovery Time :
- 24 ns
- RoHS Status :
- RoHS Compliant
- Input Capacitance :
- 1.14nF
- Dual Supply Voltage :
- 30V
- Power Dissipation-Max :
- 1.7W Ta 17W Tc
- Resistance :
- 8mOhm
- Power Dissipation :
- 17W
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 6
- Rise Time :
- 35ns
- Length :
- 3.95mm
- Mount :
- Surface Mount
- Published :
- 2009
- Turn-Off Delay Time :
- 11 ns
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 8mOhm @ 11A, 10V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Package / Case :
- DirectFET™ Isometric S1
- Height :
- 558.8μm
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 13 ns
- Continuous Drain Current (ID) :
- 11A
- Max Operating Temperature :
- 175°C
- Rds On Max :
- 8 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1140pF @ 15V
- Supplier Device Package :
- DIRECTFET S1
- Width :
- 3.95mm
- Fall Time (Typ) :
- 11 ns
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Series :
- HEXFET®
- Threshold Voltage :
- 1.9V
- Drain to Source Resistance :
- 12.8mOhm
- Termination :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 35A Tc
- Nominal Vgs :
- 2 V
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- IRF6720S2TR1PBF

N-Channel Tape & Reel (TR) 8mOhm @ 11A, 10V ±20V 1140pF @ 15V 12nC @ 4.5V 30V DirectFET™ Isometric S1
IRF6720S2TR1PBF Overview
A device's maximal input capacitance is 1140pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 11 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12.8mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.9V threshold voltage.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF6720S2TR1PBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11 ns
single MOSFETs transistor is 12.8mOhm
a threshold voltage of 1.9V
a 30V drain to source voltage (Vdss)
IRF6720S2TR1PBF Applications
There are a lot of Infineon Technologies
IRF6720S2TR1PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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