IRF6718L2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

4.3W Ta 83W Tc

Length :

9.144mm

Turn-Off Delay Time :

47 ns

Additional Feature :

ULTRA-LOW RESISTANCE

Number of Pins :

13

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Lead Free :

Lead Free

FET Type :

N-Channel

Mount :

Surface Mount

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

61A Ta 270A Tc

Turn On Delay Time :

67 ns

Package / Case :

DirectFET™ Isometric L6

Published :

2010

Rise Time :

140ns

Continuous Drain Current (ID) :

61A

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

270A

Width :

7.1mm

Fall Time (Typ) :

53 ns

JESD-30 Code :

R-XBCC-N7

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

530 mJ

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 13V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Power Dissipation :

4.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0007Ohm

Pulsed Drain Current-Max (IDM) :

490A

Vgs (Max) :

±20V

Height :

508μm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

7

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

25V

Rds On (Max) @ Id, Vgs :

0.7m Ω @ 61A, 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 4.5V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ