IRF6718L2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

4.3W Ta 83W Tc

FET Type :

N-Channel

Width :

7.1mm

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 13V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

DirectFET™ Isometric L6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Radiation Hardening :

No

Resistance :

500kOhm

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

25V

Nominal Vgs :

1.9 V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Max Operating Temperature :

175°C

Height :

508μm

Turn-Off Delay Time :

47 ns

Rds On (Max) @ Id, Vgs :

0.7mOhm @ 61A, 10V

Drain to Source Resistance :

700μOhm

Rds On Max :

700 μΩ

Min Operating Temperature :

-55°C

Termination :

SMD/SMT

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Recovery Time :

59 ns

Drain to Source Breakdown Voltage :

25V

Rise Time :

140ns

Turn On Delay Time :

67 ns

Length :

9.144mm

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 4.5V

Threshold Voltage :

1.9V

Number of Pins :

13

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Published :

2011

Supplier Device Package :

DIRECTFET L6

Input Capacitance :

6.5nF

Operating Temperature :

-55°C~175°C TJ

Dual Supply Voltage :

25V

Current - Continuous Drain (Id) @ 25°C :

61A Ta 270A Tc

Fall Time (Typ) :

53 ns

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

61A

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Mount :

Surface Mount

Power Dissipation :

4.3W