IRF6717MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.8W Ta 96W Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Radiation Hardening :

No

JESD-609 Code :

e1

Package / Case :

DirectFET™ Isometric MX

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

220A

Rise Time :

37ns

Number of Pins :

5

Vgs(th) (Max) @ Id :

2.35V @ 150μA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

530μm

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

6750pF @ 13V

Continuous Drain Current (ID) :

38A

Avalanche Energy Rating (Eas) :

290 mJ

ECCN Code :

EAR99

Width :

5.05mm

Nominal Vgs :

1.8 V

Pulsed Drain Current-Max (IDM) :

300A

Fall Time (Typ) :

15 ns

Current - Continuous Drain (Id) @ 25°C :

38A Ta 200A Tc

REACH SVHC :

No SVHC

Series :

HEXFET®

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Published :

2012

JESD-30 Code :

R-XBCC-N3

Mount :

Surface Mount

FET Type :

N-Channel

Case Connection :

DRAIN

Power Dissipation :

96W

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.25m Ω @ 38A, 10V

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 4.5V

Length :

6.35mm

Vgs (Max) :

±20V

Turn-Off Delay Time :

19 ns

Drain to Source Breakdown Voltage :

25V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE