IRF6716MTRPBF

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Mfr.Part #
IRF6716MTRPBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric MX
Datasheet
Download
Description
IRF6716 - 12V-300V N-CHANNEL POW
Stock
5,962
In Stock :
5,962

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
REACH SVHC :
No SVHC
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
26 ns
Current - Continuous Drain (Id) @ 25°C :
39A Ta 180A Tc
Gate to Source Voltage (Vgs) :
20V
Package / Case :
DirectFET™ Isometric MX
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Height :
506μm
Factory Lead Time :
12 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Surface Mount
Threshold Voltage :
1.9V
Continuous Drain Current (ID) :
39A
Published :
2008
Drain-source On Resistance-Max :
0.0016Ohm
Drain to Source Breakdown Voltage :
25V
Terminal Position :
BOTTOM
Mount :
Surface Mount
Operating Temperature :
-40°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
320A
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Fall Time (Typ) :
41 ns
Input Capacitance (Ciss) (Max) @ Vds :
5150pF @ 13V
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Series :
HEXFET®
JESD-609 Code :
e1
Drain Current-Max (Abs) (ID) :
180A
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
59nC @ 4.5V
Width :
5.05mm
Number of Pins :
5
Radiation Hardening :
No
JESD-30 Code :
R-XBCC-N3
Vgs(th) (Max) @ Id :
2.4V @ 100μA
Avalanche Energy Rating (Eas) :
330 mJ
Power Dissipation :
78W
Length :
6.35mm
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
1.6m Ω @ 40A, 10V
Power Dissipation-Max :
3.6W Ta 78W Tc
Rise Time :
105ns
FET Type :
N-Channel
Turn-Off Delay Time :
25 ns
Number of Elements :
1
ECCN Code :
EAR99
Datasheets
IRF6716MTRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6716MTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:DirectFET™ Isometric MX, Mounting Type:Surface Mount, Operating Temperature:-40°C~150°C TJ, Number of Terminations:3, Number of Pins:5, IRF6716MTRPBF pinout, IRF6716MTRPBF datasheet PDF, IRF6716MTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6716MTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6716MTRPBF


N-Channel Tape & Reel (TR) 1.6m Ω @ 40A, 10V ±20V 5150pF @ 13V 59nC @ 4.5V DirectFET™ Isometric MX

IRF6716MTRPBF Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 330 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5150pF @ 13V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 39A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.A device can conduct a maximum continuous current of [180A] according to its drain current.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 320A.A turn-on delay time of 26 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.9V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

IRF6716MTRPBF Features


the avalanche energy rating (Eas) is 330 mJ
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 320A.
a threshold voltage of 1.9V


IRF6716MTRPBF Applications


There are a lot of Infineon Technologies
IRF6716MTRPBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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