IRF6715MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

200 mJ

Package / Case :

DirectFET™ Isometric MX

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

16 ns

Fall Time (Typ) :

12 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

5340pF @ 13V

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

JESD-609 Code :

e1

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

25V

Turn On Delay Time :

20 ns

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Height :

506μm

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 4.5V

Power Dissipation-Max :

2.8W Ta 78W Tc

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 34A, 10V

Terminal Position :

BOTTOM

Number of Pins :

7

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

34A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.35mm

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Power Dissipation :

2.8W

Rise Time :

31ns

Series :

HEXFET®

Width :

5.05mm

Current - Continuous Drain (Id) @ 25°C :

34A Ta 180A Tc

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.4V @ 100μA

JESD-30 Code :

R-XBCC-N3

Number of Elements :

1

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V