IRF6714MTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Package / Case :

DirectFET™ Isometric MX

Width :

5.05mm

Rise Time :

26ns

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 29A, 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3890pF @ 13V

Terminal Position :

BOTTOM

Turn-Off Delay Time :

13 ns

Power Dissipation-Max :

2.8W Ta 89W Tc

Current - Continuous Drain (Id) @ 25°C :

29A Ta 166A Tc

Power Dissipation :

89W

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

29A

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Series :

HEXFET®

Height :

506μm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2008

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

234A

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

25V

JESD-30 Code :

R-XBCC-N3

ECCN Code :

EAR99

Number of Pins :

5

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Length :

6.35mm

Lead Free :

Lead Free

Vgs (Max) :

±20V

Number of Terminations :

3

Resistance :

2.1MOhm

FET Type :

N-Channel

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

29mA

Operating Temperature :

-40°C~150°C TJ

Case Connection :

DRAIN

Fall Time (Typ) :

9.6 ns

Turn On Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

2.4V @ 100μA