IRF6714MTRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Width :

5.05mm

Input Capacitance (Ciss) (Max) @ Vds :

3890pF @ 13V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-30 Code :

R-XBCC-N3

Drain Current-Max (Abs) (ID) :

29A

Lead Free :

Lead Free

JESD-609 Code :

e1

Continuous Drain Current (ID) :

29mA

Number of Terminations :

3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

BOTTOM

Fall Time (Typ) :

9.6 ns

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Number of Elements :

1

Radiation Hardening :

No

Turn On Delay Time :

18 ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Package / Case :

DirectFET™ Isometric MX

Number of Pins :

5

Factory Lead Time :

12 Weeks

Power Dissipation :

89W

Series :

HEXFET®

Drain to Source Breakdown Voltage :

25V

Height :

506μm

Rise Time :

26ns

Operating Temperature :

-40°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Published :

2008

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 29A, 10V

Current - Continuous Drain (Id) @ 25°C :

29A Ta 166A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.4V @ 100μA

Turn-Off Delay Time :

13 ns

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

234A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.8W Ta 89W Tc

Resistance :

2.1MOhm

ECCN Code :

EAR99

Length :

6.35mm

Case Connection :

DRAIN