IRF6714MTR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

1.9 V

Drain to Source Breakdown Voltage :

25V

Length :

5.45mm

Mount :

Surface Mount

Drain to Source Resistance :

3.4mOhm

Turn-Off Delay Time :

13 ns

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.1mOhm @ 29A, 10V

Fall Time (Typ) :

9.6 ns

Turn On Delay Time :

18 ns

Rise Time :

26ns

Current - Continuous Drain (Id) @ 25°C :

29A Ta 166A Tc

Number of Pins :

7

Vgs(th) (Max) @ Id :

2.4V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds :

3890pF @ 13V

Published :

2009

Dual Supply Voltage :

25V

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Max Operating Temperature :

150°C

Series :

HEXFET®

Input Capacitance :

3.89nF

Package / Case :

DirectFET™ Isometric MX

Gate to Source Voltage (Vgs) :

20V

Recovery Time :

39 ns

Rds On Max :

2.1 mΩ

Supplier Device Package :

DIRECTFET™ MX

Radiation Hardening :

No

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5.05mm

Drain to Source Voltage (Vdss) :

25V

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.8W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Resistance :

2.1Ohm

Continuous Drain Current (ID) :

29A

Termination :

SMD/SMT

Power Dissipation-Max :

2.8W Ta 89W Tc

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Height :

508μm

Min Operating Temperature :

-40°C

Threshold Voltage :

1.9V

Lead Free :

Lead Free