IRF6713STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.003Ohm

Turn On Delay Time :

12 ns

Mount :

Surface Mount

Case Connection :

DRAIN

Rise Time :

13ns

Current - Continuous Drain (Id) @ 25°C :

22A Ta 95A Tc

Number of Terminations :

2

Fall Time (Typ) :

6 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 13V

Factory Lead Time :

15 Weeks

Rds On (Max) @ Id, Vgs :

3m Ω @ 22A, 10V

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Number of Elements :

1

Series :

HEXFET®

Number of Pins :

5

Power Dissipation :

42W

Contact Plating :

Copper, Silver, Tin

Avalanche Energy Rating (Eas) :

34 mJ

Length :

4.826mm

Height :

506μm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

9.2 ns

FET Type :

N-Channel

Operating Temperature :

-40°C~150°C TJ

Radiation Hardening :

No

Published :

2008

Drain to Source Breakdown Voltage :

25V

Terminal Position :

BOTTOM

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.2W Ta 42W Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-XBCC-N2

Continuous Drain Current (ID) :

22A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Package / Case :

DirectFET™ Isometric SQ

Width :

3.95mm