IRF6713STR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Termination :

SMD/SMT

Continuous Drain Current (ID) :

22A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 4.5V

Mounting Type :

Surface Mount

Rise Time :

13ns

Width :

3.95mm

Turn-Off Delay Time :

9.2 ns

Height :

508μm

Supplier Device Package :

DIRECTFET™ SQ

Package / Case :

DirectFET™ Isometric SQ

Input Capacitance :

2.88nF

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Min Operating Temperature :

-40°C

Rds On (Max) @ Id, Vgs :

3mOhm @ 22A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 13V

Power Dissipation :

2.2W

Resistance :

3mOhm

Number of Pins :

6

Dual Supply Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Operating Temperature :

-40°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

22A Ta 95A Tc

Drain to Source Resistance :

4.6mOhm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Power Dissipation-Max :

2.2W Ta 42W Tc

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

3 mΩ

Length :

3.95mm

Threshold Voltage :

1.9V

FET Type :

N-Channel

Turn On Delay Time :

12 ns

Recovery Time :

30 ns

Drain to Source Breakdown Voltage :

25V

Nominal Vgs :

1.9 V

Published :

2008

Lead Free :

Lead Free

Fall Time (Typ) :

6 ns

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

25V

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Series :

HEXFET®