IRF6712STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 13V

Height :

506μm

Transistor Element Material :

SILICON

Series :

HEXFET®

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

36W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

4.826mm

Mount :

Surface Mount

Turn On Delay Time :

11 ns

Continuous Drain Current (ID) :

17A

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Resistance :

4.9mOhm

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

JESD-30 Code :

R-XBCC-N2

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 17A, 10V

Number of Pins :

6

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Number of Terminations :

2

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

2.2W Ta 36W Tc

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e1

Vgs (Max) :

±20V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Turn-Off Delay Time :

14 ns

Published :

2009

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Rise Time :

40ns

Package / Case :

DirectFET™ Isometric SQ

Width :

3.95mm

Current - Continuous Drain (Id) @ 25°C :

17A Ta 68A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING