IRF6712STR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 13V

Resistance :

4.9mOhm

Vgs(th) (Max) @ Id :

2.4V @ 50μA

Rds On Max :

4.9 mΩ

Lead Free :

Lead Free

Width :

3.95mm

Current - Continuous Drain (Id) @ 25°C :

17A Ta 68A Tc

Supplier Device Package :

DIRECTFET™ SQ

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

4.9mOhm @ 17A, 10V

Input Capacitance :

1.57nF

Radiation Hardening :

No

Power Dissipation-Max :

2.2W Ta 36W Tc

Package / Case :

DirectFET™ Isometric SQ

Nominal Vgs :

1.9 V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

506μm

Fall Time (Typ) :

12 ns

Drain to Source Breakdown Voltage :

25V

Turn-Off Delay Time :

14 ns

Rise Time :

40ns

FET Type :

N-Channel

Number of Pins :

5

Series :

HEXFET®

Termination :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

11 ns

Continuous Drain Current (ID) :

17A

Power Dissipation :

2.2W

Recovery Time :

26 ns

Length :

4.826mm

Operating Temperature :

-40°C~150°C TJ

Max Operating Temperature :

150°C

Min Operating Temperature :

-40°C

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

25V

Mounting Type :

Surface Mount

Published :

2009

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

1.9V

Dual Supply Voltage :

25V

Drain to Source Resistance :

8.7mOhm