IRF6711STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Transistor Element Material :

SILICON

Turn On Delay Time :

7.7 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 19A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

13ns

Factory Lead Time :

26 Weeks

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1810pF @ 13V

FET Type :

N-Channel

Number of Pins :

5

Height :

506μm

Continuous Drain Current (ID) :

19A

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.2W Ta 42W Tc

Length :

4.826mm

Mount :

Surface Mount

Package / Case :

DirectFET™ Isometric SQ

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Width :

3.95mm

Power Dissipation :

42W

Number of Terminations :

4

Turn-Off Delay Time :

7.1 ns

Drain-source On Resistance-Max :

0.0038Ohm

Operating Temperature :

-40°C~150°C TJ

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

62 mJ

Published :

2009

Fall Time (Typ) :

5.4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

25V

JESD-30 Code :

R-XBCC-N4

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

19A Ta 84A Tc

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

84A

Series :

HEXFET®