IRF6711STRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-XBCC-N4

Current - Continuous Drain (Id) @ 25°C :

19A Ta 84A Tc

Number of Elements :

1

Mount :

Surface Mount

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

84A

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation :

42W

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

13ns

Drain-source On Resistance-Max :

0.0038Ohm

Avalanche Energy Rating (Eas) :

62 mJ

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

26 Weeks

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

5.4 ns

Number of Pins :

5

Operating Temperature :

-40°C~150°C TJ

Published :

2009

Height :

506μm

Turn On Delay Time :

7.7 ns

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1810pF @ 13V

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Width :

3.95mm

Power Dissipation-Max :

2.2W Ta 42W Tc

Package / Case :

DirectFET™ Isometric SQ

Terminal Position :

BOTTOM

FET Type :

N-Channel

Continuous Drain Current (ID) :

19A

Length :

4.826mm

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 19A, 10V

Turn-Off Delay Time :

7.1 ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V