IRF6711STR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

25V

Fall Time (Typ) :

5.4 ns

Width :

3.95mm

Input Capacitance :

1.81nF

Power Dissipation :

42W

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Mount :

Surface Mount

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1810pF @ 13V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

19A Ta 84A Tc

Supplier Device Package :

DIRECTFET™ SQ

Threshold Voltage :

1.8V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Operating Temperature :

-40°C~150°C TJ

Min Operating Temperature :

-40°C

Published :

2009

Rise Time :

13ns

Turn On Delay Time :

7.7 ns

Turn-Off Delay Time :

7.1 ns

Number of Elements :

1

Package / Case :

DirectFET™ Isometric SQ

Height :

506μm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Drain to Source Voltage (Vdss) :

25V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

5

Continuous Drain Current (ID) :

12A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Operating Temperature :

150°C

Drain to Source Resistance :

6.5mOhm

Rds On (Max) @ Id, Vgs :

3.8mOhm @ 19A, 10V

Length :

4.826mm

Radiation Hardening :

No

Power Dissipation-Max :

2.2W Ta 42W Tc

Nominal Vgs :

1.8 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

3.8 mΩ

FET Type :

N-Channel