IRF6710S2TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Factory Lead Time :

15 Weeks

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

6 ns

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 12A, 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

7.9 ns

Rise Time :

20ns

Number of Pins :

6

Width :

3.95mm

Continuous Drain Current (ID) :

12mA

Number of Elements :

1

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Power Dissipation :

15W

Current - Continuous Drain (Id) @ 25°C :

12A Ta 37A Tc

Length :

4.826mm

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 13V

Drain-source On Resistance-Max :

0.0059Ohm

Turn-Off Delay Time :

5.2 ns

JESD-30 Code :

R-XBCC-N2

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

24 mJ

Drain to Source Breakdown Voltage :

25V

Power Dissipation-Max :

1.8W Ta 15W Tc

Package / Case :

DirectFET™ Isometric S1

Height :

558.8μm

Mount :

Surface Mount

Vgs (Max) :

±20V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V