IRF6709S2TR1PBF

Share

Or copy the link below:

Mfr.Part #
IRF6709S2TR1PBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric S1
Datasheet
Download
Description
MOSFET N-CH 25V 12A DIRECTFET
Stock
9,472
In Stock :
9,472

Request A Quote(RFQ)

* Fullname:
* Company:
* E-Mail:
  Phone:
  Comment:
* Quantity:
Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
25ns
Series :
HEXFET®
Vgs(th) (Max) @ Id :
2.35V @ 25µA
Gate to Source Voltage (Vgs) :
20V
Length :
4.826mm
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Continuous Drain Current (ID) :
12A
Termination :
SMD/SMT
Operating Temperature :
-55°C~175°C TJ
Published :
2008
Fall Time (Typ) :
9.5 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
7.8mOhm @ 12A, 10V
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
12A Ta 39A Tc
Min Operating Temperature :
-55°C
Package / Case :
DirectFET™ Isometric S1
Dual Supply Voltage :
25V
Recovery Time :
23 ns
Turn On Delay Time :
8.4 ns
Supplier Device Package :
DIRECTFET S1
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Width :
3.95mm
Number of Pins :
5
Nominal Vgs :
1.8 V
Input Capacitance (Ciss) (Max) @ Vds :
1010pF @ 13V
Max Operating Temperature :
175°C
Power Dissipation :
1.8W
Drain to Source Voltage (Vdss) :
25V
Turn-Off Delay Time :
9.1 ns
Input Capacitance :
1.01nF
Mount :
Surface Mount
REACH SVHC :
No SVHC
Drain to Source Resistance :
13.5mOhm
Radiation Hardening :
No
Threshold Voltage :
1.8V
FET Type :
N-Channel
Rds On Max :
7.8 mΩ
Resistance :
7.8mOhm
Drain to Source Breakdown Voltage :
25V
Vgs (Max) :
±20V
Height :
558.8μm
Power Dissipation-Max :
1.8W Ta 21W Tc
RoHS Status :
RoHS Compliant
Datasheets
IRF6709S2TR1PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6709S2TR1PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:DirectFET™ Isometric S1, Number of Pins:5, IRF6709S2TR1PBF pinout, IRF6709S2TR1PBF datasheet PDF, IRF6709S2TR1PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6709S2TR1PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6709S2TR1PBF


N-Channel Tape & Reel (TR) 7.8mOhm @ 12A, 10V ±20V 1010pF @ 13V 12nC @ 4.5V 25V DirectFET™ Isometric S1

IRF6709S2TR1PBF Overview


The maximum input capacitance of this device is 1010pF @ 13V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=25V, and ID flows to VDS at 25VVDS, the drain-source breakdown voltage is 25V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 9.1 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 13.5mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.8V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IRF6709S2TR1PBF Features


a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 9.1 ns
single MOSFETs transistor is 13.5mOhm
a threshold voltage of 1.8V
a 25V drain to source voltage (Vdss)


IRF6709S2TR1PBF Applications


There are a lot of Infineon Technologies
IRF6709S2TR1PBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Purchase

You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.

RFQ (Request for Quotations)

It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.

Payment Method

For your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.

IMPORTANT NOTICE

You may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.

Shipping Method

Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...

Shipping Cost

Shipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.

The basic freight (for package ≤0.5 KG ) depends on the time zones and countries

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.

Manufacturer related products

Catalog related products

RFQ
BOM