IRF6708S2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

10 ns

Drain to Source Voltage (Vdss) :

30V

Max Operating Temperature :

175°C

Threshold Voltage :

1.8V

REACH SVHC :

No SVHC

Input Capacitance :

1.01nF

Continuous Drain Current (ID) :

13A

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Rds On Max :

8.9 mΩ

Turn On Delay Time :

9.1 ns

Element Configuration :

Single

Power Dissipation-Max :

2.5W Ta 20W Tc

Power Dissipation :

20W

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

490μm

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 15V

Package / Case :

DirectFET™ Isometric S1

Series :

HEXFET®

Drain to Source Resistance :

14.3mOhm

Min Operating Temperature :

-55°C

Length :

3.95mm

Rise Time :

27ns

Number of Pins :

6

Nominal Vgs :

1.8 V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

11 ns

Number of Elements :

1

Vgs (Max) :

±20V

Published :

2011

Rds On (Max) @ Id, Vgs :

8.9mOhm @ 13A, 10V

Supplier Device Package :

DIRECTFET S1

Width :

3.95mm

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Drain to Source Breakdown Voltage :

30V