IRF6706S2TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

26W

Rise Time :

20ns

Drain to Source Voltage (Vdss) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1810pF @ 13V

Input Capacitance :

1.81nF

Radiation Hardening :

No

Drain to Source Resistance :

6.5mOhm

Height :

558.8μm

Min Operating Temperature :

-55°C

Rds On Max :

3.8 mΩ

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Width :

3.95mm

Series :

HEXFET®

FET Type :

N-Channel

Lead Free :

Lead Free

Continuous Drain Current (ID) :

17A

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.8W Ta 26W Tc

Turn-Off Delay Time :

9.9 ns

Number of Pins :

5

Fall Time (Typ) :

9.2 ns

Rds On (Max) @ Id, Vgs :

3.8mOhm @ 17A, 10V

Max Operating Temperature :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

6.5mOhm

Published :

2010

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Turn On Delay Time :

12 ns

Drain to Source Breakdown Voltage :

25V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Supplier Device Package :

DIRECTFET S1

Length :

4.826mm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

17A Ta 63A Tc

Package / Case :

DirectFET™ Isometric S1