IRF6691TRPBF
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- Mfr.Part #
- IRF6691TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MT
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 32A DIRECTFET
- Stock
- 11,513
- In Stock ：
- 11,513
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.35mm
- Turn-Off Delay Time :
- 25 ns
- Drain to Source Voltage (Vdss) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Mount :
- Surface Mount
- Turn On Delay Time :
- 23 ns
- Min Operating Temperature :
- -40°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Input Capacitance :
- 6.58nF
- Package / Case :
- DirectFET™ Isometric MT
- Gate to Source Voltage (Vgs) :
- 12V
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 6580pF @ 10V
- Vgs (Max) :
- ±12V
- Operating Temperature :
- -40°C~150°C TJ
- Drain to Source Resistance :
- 2.5MOhm
- Rds On (Max) @ Id, Vgs :
- 1.8mOhm @ 15A, 10V
- Power Dissipation-Max :
- 2.8W Ta 89W Tc
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 32A
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 20V
- Width :
- 5.05mm
- Supplier Device Package :
- DIRECTFET™ MT
- Rise Time :
- 95ns
- Rds On Max :
- 1.8 MΩ
- Number of Pins :
- 5
- Series :
- HEXFET®
- Radiation Hardening :
- No
- Height :
- 506μm
- Continuous Drain Current (ID) :
- 32mA
- Power Dissipation :
- 2W
- Voltage - Rated DC :
- 20V
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 10 ns
- Current - Continuous Drain (Id) @ 25°C :
- 32A Ta 180A Tc
- Datasheets
- IRF6691TRPBF
N-Channel Tape & Reel (TR) 1.8mOhm @ 15A, 10V ±12V 6580pF @ 10V 71nC @ 4.5V 20V DirectFET™ Isometric MT
IRF6691TRPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6580pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 32mA amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 2.5mOhm.A turn-on delay time of 23 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF6691TRPBF Features
a continuous drain current (ID) of 32mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 2.5mOhm
a 20V drain to source voltage (Vdss)
IRF6691TRPBF Applications
There are a lot of Infineon Technologies
IRF6691TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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