IRF6691TR1PBF

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Mfr.Part #
IRF6691TR1PBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric MT
Datasheet
Download
Description
MOSFET N-CH 20V 32A DIRECTFET
Stock
24,090
In Stock :
24,090

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
6580pF @ 10V
Rds On (Max) @ Id, Vgs :
1.8mOhm @ 15A, 10V
Power Dissipation :
2.8W
Length :
6.35mm
Gate to Source Voltage (Vgs) :
12V
Rise Time :
95ns
RoHS Status :
RoHS Compliant
Number of Pins :
5
Voltage - Rated DC :
20V
Number of Elements :
1
Mounting Type :
Surface Mount
Height :
506μm
Min Operating Temperature :
-40°C
Termination :
SMD/SMT
Max Operating Temperature :
150°C
Input Capacitance :
6.58nF
Continuous Drain Current (ID) :
26A
Drain to Source Voltage (Vdss) :
20V
Turn On Delay Time :
23 ns
Dual Supply Voltage :
20V
Threshold Voltage :
1.6V
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Vgs (Max) :
±12V
Packaging :
Tape and Reel (TR)
Drain to Source Resistance :
2.5MOhm
Package / Case :
DirectFET™ Isometric MT
Current - Continuous Drain (Id) @ 25°C :
32A Ta 180A Tc
Drain to Source Breakdown Voltage :
20V
Published :
2006
Rds On Max :
1.8 MΩ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
DIRECTFET™ MT
Mount :
Surface Mount
Lead Free :
Lead Free
Operating Temperature :
-40°C~150°C TJ
Series :
HEXFET®
Resistance :
2.5MOhm
Fall Time (Typ) :
10 ns
Turn-Off Delay Time :
25 ns
Gate Charge (Qg) (Max) @ Vgs :
71nC @ 4.5V
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation-Max :
2.8W Ta 89W Tc
Width :
5.05mm
Current Rating :
32A
Nominal Vgs :
1.6 V
Radiation Hardening :
No
Datasheets
IRF6691TR1PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6691TR1PBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Mounting Type:Surface Mount, Package / Case:DirectFET™ Isometric MT, Operating Temperature:-40°C~150°C TJ, IRF6691TR1PBF pinout, IRF6691TR1PBF datasheet PDF, IRF6691TR1PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6691TR1PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6691TR1PBF


N-Channel Tape & Reel (TR) 1.8mOhm @ 15A, 10V ±12V 6580pF @ 10V 71nC @ 4.5V 20V DirectFET™ Isometric MT

IRF6691TR1PBF Overview


The maximum input capacitance of this device is 6580pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 26A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.5mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 23 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.6V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IRF6691TR1PBF Features


a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 2.5mOhm
a threshold voltage of 1.6V
a 20V drain to source voltage (Vdss)


IRF6691TR1PBF Applications


There are a lot of Infineon Technologies
IRF6691TR1PBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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