IRF6691TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

DirectFET™ Isometric MT

Current - Continuous Drain (Id) @ 25°C :

32A Ta 180A Tc

Max Operating Temperature :

150°C

Forward Voltage :

650mV

Number of Pins :

7

Input Capacitance (Ciss) (Max) @ Vds :

6580pF @ 10V

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

12V

Threshold Voltage :

2.5V

Dual Supply Voltage :

20V

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Radiation Hardening :

No

Drain to Source Resistance :

1.8MOhm

Rds On (Max) @ Id, Vgs :

1.8mOhm @ 15A, 10V

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 4.5V

Vgs (Max) :

±12V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Contains Lead

FET Type :

N-Channel

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

20V

Turn-Off Delay Time :

25 ns

Voltage - Rated DC :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On Max :

1.8 MΩ

Nominal Vgs :

2.5 V

Supplier Device Package :

DIRECTFET™ MT

Mount :

Surface Mount

Fall Time (Typ) :

10 ns

RoHS Status :

Non-RoHS Compliant

Power Dissipation :

2.8W

Operating Temperature :

-40°C~150°C TJ

Input Capacitance :

6.58nF

Min Operating Temperature :

-40°C

Reverse Recovery Time :

32 ns

Turn On Delay Time :

23 ns

Rise Time :

95ns

Published :

2005

Packaging :

Tape and Reel (TR)

Current Rating :

32A

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

32A

Power Dissipation-Max :

2.8W Ta 89W Tc