IRF6678TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

240A

Operating Temperature :

-40°C~150°C TJ

Rise Time :

71ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

24A

Length :

6.35mm

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

FET Type :

N-Channel

REACH SVHC :

No SVHC

Fall Time (Typ) :

8.1 ns

JESD-30 Code :

R-XBCC-N3

Current Rating :

30A

Number of Pins :

5

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 30A, 10V

Turn-Off Delay Time :

27 ns

Power Dissipation-Max :

2.8W Ta 89W Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Height :

506μm

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

DirectFET™ Isometric MX

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

89W

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Voltage - Rated DC :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

21 ns

Nominal Vgs :

2.25 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5640pF @ 15V

Transistor Element Material :

SILICON

Published :

2006

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

210 mJ

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0022Ohm

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Width :

5.05mm

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

30A Ta 150A Tc