IRF6678TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

5640pF @ 15V

Width :

5.05mm

Mounting Type :

Surface Mount

Threshold Voltage :

1.35V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

24A

Number of Pins :

5

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Dual Supply Voltage :

30V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Min Operating Temperature :

-40°C

Max Operating Temperature :

150°C

REACH SVHC :

No SVHC

Fall Time (Typ) :

8.1 ns

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 30A, 10V

Radiation Hardening :

No

Rds On Max :

2.2 MΩ

Power Dissipation :

89W

Termination :

SMD/SMT

Current Rating :

30A

Input Capacitance :

5.64nF

Nominal Vgs :

1.35 V

Turn On Delay Time :

21 ns

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

Rise Time :

71ns

Operating Temperature :

-40°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

30A Ta 150A Tc

Supplier Device Package :

DIRECTFET™ MX

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Height :

506μm

Power Dissipation-Max :

2.8W Ta 89W Tc

Length :

6.35mm

Turn-Off Delay Time :

27 ns

Drain to Source Resistance :

3mOhm

RoHS Status :

RoHS Compliant

Package / Case :

DirectFET™ Isometric MX

Resistance :

2.2MOhm

Lead Free :

Lead Free

Mount :

Surface Mount

Published :

2006