IRF6678TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Published :

2006

FET Type :

N-Channel

Power Dissipation :

2.8W

Min Operating Temperature :

-40°C

Reverse Recovery Time :

43 ns

Input Capacitance (Ciss) (Max) @ Vds :

5640pF @ 15V

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

7

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Supplier Device Package :

DIRECTFET™ MX

Termination :

SMD/SMT

Current Rating :

30A

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Lead Free

Dual Supply Voltage :

30V

Nominal Vgs :

2.25 V

Fall Time (Typ) :

8.1 ns

RoHS Status :

Non-RoHS Compliant

Threshold Voltage :

2.25V

Current - Continuous Drain (Id) @ 25°C :

30A Ta 150A Tc

Mounting Type :

Surface Mount

Rise Time :

71ns

Input Capacitance :

5.64nF

Rds On Max :

2.2 MΩ

Turn-Off Delay Time :

27 ns

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 30A, 10V

Operating Temperature :

-40°C~150°C TJ

Drain to Source Resistance :

1.7Ohm

Voltage - Rated DC :

30V

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Package / Case :

DirectFET™ Isometric MX

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

30A

Power Dissipation-Max :

2.8W Ta 89W Tc