IRF6678

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

DirectFET™ Isometric MX

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 30A, 10V

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5640pF @ 15V

Terminal Position :

BOTTOM

Drain-source On Resistance-Max :

0.0022Ohm

Transistor Element Material :

SILICON

Fall Time (Typ) :

8.1 ns

Avalanche Energy Rating (Eas) :

210 mJ

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Published :

2005

Vgs (Max) :

±20V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Current Rating :

30A

Continuous Drain Current (ID) :

24A

Lead Free :

Lead Free

Number of Elements :

1

Number of Pins :

7

Current - Continuous Drain (Id) @ 25°C :

30A Ta 150A Tc

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Turn-Off Delay Time :

27 ns

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Rise Time :

71ns

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

Power Dissipation :

2.8W

JESD-30 Code :

R-XBCC-N3

Voltage - Rated DC :

30V

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.8W Ta 89W Tc

FET Type :

N-Channel

Series :

HEXFET®

Mount :

Surface Mount

Case Connection :

DRAIN