IRF6674TRPBF
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- Mfr.Part #
- IRF6674TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MZ
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 13.4A DIRECTFET
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 25V
- Number of Elements :
- 1
- JESD-30 Code :
- R-XBCC-N3
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 98 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 13.4A Ta 67A Tc
- Power Dissipation :
- 89W
- Width :
- 5.05mm
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Drain to Source Breakdown Voltage :
- 60V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Height :
- 530μm
- Length :
- 6.35mm
- ECCN Code :
- EAR99
- Package / Case :
- DirectFET™ Isometric MZ
- Rise Time :
- 12ns
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Operating Temperature :
- -40°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 12 ns
- Radiation Hardening :
- No
- Nominal Vgs :
- 4 V
- Fall Time (Typ) :
- 8.7 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Turn On Delay Time :
- 7 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Published :
- 2008
- Series :
- HEXFET®
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- BOTTOM
- Continuous Drain Current (ID) :
- 67A
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 13.4A, 10V
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 12 Weeks
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 3.6W Ta 89W Tc
- Vgs(th) (Max) @ Id :
- 4.9V @ 100μA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Threshold Voltage :
- 4V
- Number of Pins :
- 5
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Datasheets
- IRF6674TRPBF
N-Channel Tape & Reel (TR) 11m Ω @ 13.4A, 10V ±20V 1350pF @ 25V 36nC @ 10V DirectFET™ Isometric MZ
IRF6674TRPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 98 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1350pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 67A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF6674TRPBF Features
the avalanche energy rating (Eas) is 98 mJ
a continuous drain current (ID) of 67A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns
a threshold voltage of 4V
IRF6674TRPBF Applications
There are a lot of Infineon Technologies
IRF6674TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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