IRF6668TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-40°C~150°C TJ

Element Configuration :

Single

REACH SVHC :

No SVHC

Turn On Delay Time :

19 ns

Rds On (Max) @ Id, Vgs :

15m Ω @ 12A, 10V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Rise Time :

13ns

Mounting Type :

Surface Mount

Mount :

Surface Mount

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

80V

ECCN Code :

EAR99

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Threshold Voltage :

4V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

1

Current Rating :

55A

Avalanche Energy Rating (Eas) :

24 mJ

Height :

533.4μm

Case Connection :

DRAIN

Lead Free :

Lead Free

Number of Pins :

3

Vgs (Max) :

±20V

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

23 ns

Length :

6.35mm

Width :

5.0546mm

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

55mA

Number of Terminations :

3

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.015Ohm

Power Dissipation :

89W

Vgs(th) (Max) @ Id :

4.9V @ 100μA

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.8W Ta 89W Tc

JESD-609 Code :

e1

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 25V

Turn-Off Delay Time :

7.1 ns

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Package / Case :

DirectFET™ Isometric MZ

Voltage - Rated DC :

80V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

170A