IRF6668TR1PBF
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- Mfr.Part #
- IRF6668TR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MZ
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 55A DIRECTFET MZ
- Stock
- 1,180
- In Stock ：
- 1,180
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1320pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Turn On Delay Time :
- 19 ns
- Length :
- 6.35mm
- Height :
- 533.4μm
- Drain to Source Resistance :
- 12mOhm
- Power Dissipation-Max :
- 2.8W Ta 89W Tc
- Power Dissipation :
- 2.8W
- Number of Pins :
- 5
- Supplier Device Package :
- DIRECTFET™ MZ
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- Published :
- 2006
- Turn-Off Delay Time :
- 7.1 ns
- Rds On Max :
- 15 mΩ
- Dual Supply Voltage :
- 80V
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 44A
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -40°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 1.32nF
- Operating Temperature :
- -40°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.9V @ 100μA
- Rise Time :
- 13ns
- Resistance :
- 15mOhm
- Lead Free :
- Lead Free
- Element Configuration :
- Dual
- Max Operating Temperature :
- 150°C
- Fall Time (Typ) :
- 23 ns
- Voltage - Rated DC :
- 80V
- Nominal Vgs :
- 4 V
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 12A, 10V
- Drain to Source Voltage (Vdss) :
- 80V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HEXFET®
- Package / Case :
- DirectFET™ Isometric MZ
- Width :
- 5.05mm
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 4V
- Drain to Source Breakdown Voltage :
- 80V
- Current Rating :
- 55A
- Datasheets
- IRF6668TR1PBF
N-Channel Tape & Reel (TR) 15mOhm @ 12A, 10V ±20V 1320pF @ 25V 31nC @ 10V 80V DirectFET™ Isometric MZ
IRF6668TR1PBF Overview
A device's maximal input capacitance is 1320pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 44A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 80V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 7.1 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 80V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF6668TR1PBF Features
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 7.1 ns
single MOSFETs transistor is 12mOhm
a threshold voltage of 4V
a 80V drain to source voltage (Vdss)
IRF6668TR1PBF Applications
There are a lot of Infineon Technologies
IRF6668TR1PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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