IRF6665TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Width :

3.95mm

Threshold Voltage :

5V

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Power Dissipation :

42W

Current Rating :

4.2A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

14 ns

REACH SVHC :

No SVHC

Voltage - Rated DC :

100V

Continuous Drain Current (ID) :

3.4A

Fall Time (Typ) :

4.3 ns

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Elements :

1

Series :

HEXFET®

Case Connection :

DRAIN

Power Dissipation-Max :

2.2W Ta 42W Tc

FET Type :

N-Channel

Element Configuration :

Single

Vgs (Max) :

±20V

Radiation Hardening :

No

Height :

506μm

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

Package / Case :

DirectFET™ Isometric SH

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Rise Time :

2.8ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Length :

4.826mm

Mount :

Surface Mount

JESD-30 Code :

R-XBCC-N2

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

62m Ω @ 5A, 10V

Nominal Vgs :

5 V

Turn On Delay Time :

7.4 ns

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.062Ohm

Mounting Type :

Surface Mount