IRF6665TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

62m Ω @ 5A, 10V

Height :

506μm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Element Configuration :

Single

Nominal Vgs :

5 V

Current Rating :

4.2A

Continuous Drain Current (ID) :

3.4A

Radiation Hardening :

No

Transistor Element Material :

SILICON

FET Type :

N-Channel

Turn-Off Delay Time :

14 ns

Drain-source On Resistance-Max :

0.062Ohm

Mount :

Surface Mount

JESD-30 Code :

R-XBCC-N2

Width :

3.95mm

Length :

4.826mm

Factory Lead Time :

12 Weeks

Package / Case :

DirectFET™ Isometric SH

Threshold Voltage :

5V

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Operating Temperature :

-40°C~150°C TJ

Power Dissipation-Max :

2.2W Ta 42W Tc

Rise Time :

2.8ns

Power Dissipation :

42W

Voltage - Rated DC :

100V

Number of Elements :

1

Mounting Type :

Surface Mount

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

100V

Series :

HEXFET®

Turn On Delay Time :

7.4 ns

JESD-609 Code :

e1

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Terminations :

2

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

4.3 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Vgs (Max) :

±20V

Published :

2006

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Additional Feature :

High Reliability

Case Connection :

DRAIN