IRF6665TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

4.3 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Power Dissipation-Max :

2.2W Ta 42W Tc

Package / Case :

DirectFET™ Isometric SH

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Rise Time :

2.8ns

Turn On Delay Time :

7.4 ns

FET Type :

N-Channel

Configuration :

Single

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

62m Ω @ 5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Drain Current-Max (Abs) (ID) :

19A

Packaging :

Tape and Reel (TR)

Power Dissipation :

42W

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

Published :

2005

Continuous Drain Current (ID) :

4.2A

Operating Temperature :

-40°C~150°C TJ

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 19A Tc

Radiation Hardening :

No

Turn-Off Delay Time :

14 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Vgs (Max) :

±20V

Terminal Finish :

Tin/Lead (Sn/Pb)