IRF6662TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

39 mJ

Terminal Position :

BOTTOM

Turn-Off Delay Time :

24 ns

Number of Pins :

7

Published :

2006

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta 47A Tc

Turn On Delay Time :

11 ns

Current Rating :

8.3A

Length :

6.35mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

FET Type :

N-Channel

Voltage - Rated DC :

100V

Rise Time :

7.5ns

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Power Dissipation :

89W

Lead Free :

Lead Free

Case Connection :

DRAIN

Height :

506μm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

31mOhm

Mounting Type :

Surface Mount

Package / Case :

DirectFET™ Isometric MZ

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Radiation Hardening :

No

Mount :

Surface Mount

JESD-30 Code :

R-XBCC-N3

Power Dissipation-Max :

2.8W Ta 89W Tc

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Fall Time (Typ) :

5.9 ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

22m Ω @ 8.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.05mm

Pulsed Drain Current-Max (IDM) :

66A

Continuous Drain Current (ID) :

6.6A